© The Institution of Electrical Engineers
The authors report the fabrication of a GaAs Gunn-effect structure with three Au–Ge–Ni ohmic contacts. The device has shown useful pulse-regeneration gain, together with good reflection insensitivity, and can be considered a useful structure for gigapulse-per-second communication systems.
References
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1)
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H. Takeuchi ,
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GaAs bulk effect pulse regenerator with a Schottky barrier control gate.
Proc. Inst. Elec. Electron. Eng.
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2)
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Mause, K., Salow, H., Schlachetzki, A., Bochem, K.H., Heime, K.: `Circuit integration with gate controlled Gunn devices', paper 5.7, 4th international symposium on GaAs and related compounds, 1972, Colorado, USA.
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3)
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H. Hartnagel
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Reflection insensitive Gunn regenerator for pulse communication.
Solid-State Electron.
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4)
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M. Kawashima ,
S. Kataoka
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Measurement of transverse spreading velocity of a high-field domain in a 3-terminal Gunn device.
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