Measurement of carrier-concentration profiles in epitaxial indium phosphide

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Measurement of carrier-concentration profiles in epitaxial indium phosphide

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© The Institution of Electrical Engineers
Published

A technique is described for measuring carrier-concentration profiles of vapour-deposited epitaxial indium phosphide using the capacitance/voltage characteristics of a reverse biased metal-insulator-semiconductor diode. Profiles of layers grown on chromium and tin-doped substrates are presented. The effect of dopant type on the sharpness of electrical interfaces is discussed.

Inspec keywords: semiconductor materials testing; carrier density; semiconductor doping; indium compounds; III-V semiconductors

Other keywords: capacitance/voltage characteristics; epitaxial indium phosphide; Sn; semiconductor doping; Cr; carrier density; semiconductor materials testing; substrates; III V semiconductors

Subjects: Semiconductor doping; Crystal growth

References

    1. 1)
      • K.H. Zainiger . Automatic display of m.i.s. capacitance versus bias voltage. RCA Rev. , 341 - 359
    2. 2)
      • P.J. Bakandall , D.J. Colliver , A.F. Fray . An instrument for the rapid determination of semiconductor impurity profiles. J. Phys. E. , 213 - 221
    3. 3)
      • Edridge, A.L., Purcell, J.J.: `High-power Q band pulsed Gunn oscillators', Proceedings of the European microwave conference, 1971, Stockholm.
    4. 4)
      • B. Schwartz . Preliminary results on oxidation of GaAs and GaP during chemical etching. J. Electrochem. Soc. , 657 - 658
    5. 5)
      • D.J. Colliver , S.E. Gibbs , B.C. Taylor . Material selection for efficient transferred-electron devices at Q band. Electron. Lett. , 353 - 355
    6. 6)
      • C.A. Mead . Metal semiconductor surface barriers. Solid-State Electron. , 1023 - 1033
    7. 7)
      • Hales, M.C., Knight, J.R., Wilkins, C.W.: `Epitaxial InP and InAs', Institute of Physics symposium on GaAs and related compounds, 1970, Aachen, p. 50–56.
    8. 8)
      • W. Schottky . (1942) Z. Phys..
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