Computer optimisation of double-drift-region IMPATT diodes

Computer optimisation of double-drift-region IMPATT diodes

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Design parameters for double-drift-region silicon IMPATT diodes for frequencies from 10 to 100 GHz are presented. The design is based on extensive large-signal computer simulations at one frequency of two different diode structures in a simple circuit. From these simulations, a simple design criterion was derived which permits the calculation of optimised impurity profiles for any desired frequency, with a small computer effort.


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