Measurement of admittance of Gunn diodes in passive and active regions of bias voltage

Measurement of admittance of Gunn diodes in passive and active regions of bias voltage

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The transfer function of the microwave circuit to the diode chip is obtained for a Gunn diode by combining 10 GHz admittance measurements with the measurement of the low-frequency differential resistance, which is a function of the bias voltage. The transfer parameters thus found can be used to calculate the admittance of an oscillating diode.


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