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F.E.T. theory of strip-coupled Rayleigh-wave amplifier

F.E.T. theory of strip-coupled Rayleigh-wave amplifier

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It is shown that information can be transferred from one strip to another across a finite gap in which the carrier wave is subject to rapid decay. Each region in which a metal strip is located above the semiconductor, and insulated from it, is treated as an individual f.e.t. amplifier, exciting in the semiconductor a conduction current which flows into the adjacent similar region. Hence the carrier-wave decay between strips is unimportant. The effect of substituting ohmic contacts for the insulated ‘gates’ is discussed as an extension of this theory.

References

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      • R. Adler . Surface-wave amplifier with improved geometry. Electron. Lett. , 65 - 66
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      • Coldren, L.A.: `Monolithic acoustic surface wave amplifiers', 1972, Ph.D. dissertation, Stanford University, p. 33–42.
    3. 3)
      • Kino, G.S., Shreve, W.R.: `A strip coupled Raylcigh wave amplifier', Proceedings of the IEEE ultrasonics symposium, 1972.
    4. 4)
      • Kino, G.S., Ludvik, S., Shaw, H.J., Shreve, W.R., White, J.M., Winslow, D.K.: `Signal processing by parametric interactions in delay line devices', 2112, Microwave laboratory report, 1972.
    5. 5)
      • Maerfeld, C., Tournois, P.: `An acoustoelectric multistrip amplifier', Proceedings of the IEEE ultrasonics symposium, 1972.
    6. 6)
      • T.J.B. Swanenburg . Observation of negative conductance in an interdigital electrode structure on an oxydized Si-surface. Phys. Lett.
    7. 7)
      • G.S. Kino . Carrier waves in semiconductors. I—zero temperature theory. IEEE Trans. , 178 - 192
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