Numerical calculation of low-frequency capacitance/voltage curves of m.o.s. capacitors with nonconstant doping profiles

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Numerical calculation of low-frequency capacitance/voltage curves of m.o.s. capacitors with nonconstant doping profiles

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© The Institution of Electrical Engineers
Published

It is demonstrated how a numerical solution of Poisson's equation can be applied to the calculation of low-frequency capacitance-voltage curves of m.o.s. capacitors with nonconstant doping profiles. Calculation by uniform-doping approximation introduces little error, but it can be avoided, if necessary, by employing the present method.

Inspec keywords: metal-insulator-semiconductor structures; numerical methods; semiconductor doping

Other keywords: Poisson's equations; MOS capacitors; numerical methods; semiconductor doping; capacitors; metal insulator semiconductor devices

Subjects: Other field effect devices; Semiconductor doping

References

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      • A.S. Grove , O. Leistiko , C.T. Sah . Redistribution of acceptor and donor impurities during thermal oxidation of silicon. J. Appl. Phys.
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      • Sah, C.T., Chiu, T.L., Pierret, R.F.: 2, Solid State Electronics Laboratory technical report, 1966.
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      • R.F. Pierret , G. Panigrahi . Solution of Poisson's equation appropriate for semiconductors with nonconstant impurity profiles. J. Appl. Phys. , 2260 - 2261
    4. 4)
      • A.S. Grove , B.E. Deal , E.H. Snow , C.T. Sah . Investigation of thermally oxidized silicon surfaces using MOS structures. Solid State Electron.
    5. 5)
      • Sah, C.T.: 1, Solid State Electronics Laboratory technical report, 1964.
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