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Effects of boron density on radiation resistance of copper-contaminated n/p type silicon solar cells

Effects of boron density on radiation resistance of copper-contaminated n/p type silicon solar cells

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© The Institution of Electrical Engineers
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The radiation-resistance properties of copper-contaminated n/p type cells are observed only when the copper concentration is larger than the boron density in the bulk region of the cells. The values of Δ(1/L2) on n/p type cells are not always proportional to the boron density in the bulk region.

Inspec keywords: copper; boron; solar cells; semiconductor doping

Other keywords: copper doped n/p type; solar cells; radiation resistance; boron density effect; semiconductor doping

Subjects: Solar cells and arrays; Photoelectric conversion; solar cells and arrays

References

    1. 1)
      • T. Nakano , Y. Inuishi . Effects of dosage and impurities on radiation damage of carrier life time in Si. J. Phys. Soc. Japan , 851 - 858
    2. 2)
      • M. Wolf , G.J. Brucker . Recent developments in radiation hardening silicon solar cells. Energy Conv. , 75 - 90
    3. 3)
      • A. Usami . Copper-doped radiation-resistant n/p-type silicon solar cells. Solid-State Electron. , 1202 - 1204
    4. 4)
      • J.J. Wysocki . Lithium-doped radiation-resistant silicon solar cells. IEEE Trans. , 168 - 173
    5. 5)
      • K. Nakashima , Y. Inuishi . The effects of neutron irradiation in p-type silicon. J. Phys. Soc. Japan , 397 - 405
    6. 6)
      • R.N. Hall , J.H. Rocetts . Diffusion and solubility of copper in extrinsic and intrinsic germanium, silicon and gallium arsenide. J. Appl. Phys. , 379 - 397
    7. 7)
      • A. Usami . Effects of junction depth on the radiation damage of silicon solar cells. Electron. & Commun. Japan , 113 - 120
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