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Effects of boron density on radiation resistance of copper-contaminated n/p type silicon solar cells

Effects of boron density on radiation resistance of copper-contaminated n/p type silicon solar cells

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The radiation-resistance properties of copper-contaminated n/p type cells are observed only when the copper concentration is larger than the boron density in the bulk region of the cells. The values of Δ(1/L2) on n/p type cells are not always proportional to the boron density in the bulk region.

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