Electrically alterable avalanche-injection memory

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Electrically alterable avalanche-injection memory

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© The Institution of Electrical Engineers
Published

In a 2-layer (SiO2–Si3 N4) dielectric structure, avalanche-injected electrons are collected by a floating gate. It is shown that this charge can be removed from the floating gate by conduction through the Si3N4 layer.

Inspec keywords: electron avalanches; semiconductor storage devices

Other keywords: SiO2-Si3N4 dielectric structure; semiconductor storage devices; electron avalanches; floating gate; avalanche injection memory

Subjects: Semiconductor storage

References

    1. 1)
      • D. Frohman-Bentchkowsky . Memory behaviour in a floating-gate avalanche injection mos (FAMOS) structure. Appl. Phys. Lett. , 332 - 334
    2. 2)
      • S.M. Sze . Current transport and maximum dielectric strength of silicon, nitride film. J. Appl. Phys. , 2951 - 2956
    3. 3)
      • E.H. Nicollian , A. Goetzberger , C.N. Berlund . Avalanche injection currents and charging phenomena in thermal SiO2. Appl. Phys. Lett. , 174 - 176
    4. 4)
      • Tarui, Y., Hayashi, Y., Nagai, K.: paper WPM52, Presented at the ISSCC conference, 1972, USA, University of Pennsylvania.
    5. 5)
      • M. Lenzlinger , E.H. Snow . Fowler-Nordheim tunelling into thermally grown SiO2. J. Appl. Phys. , 278 - 283
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