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Effect of contact resistance on Gunn-diode risetimes

Effect of contact resistance on Gunn-diode risetimes

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It is shown that the dominant mechanism limiting the risetime of pulsed Gunn-effect oscillators is a parasitic resistance within the device. If this resistance is reduced by careful control of the contact metallisation, or alternatively by the use of n+ contacts, risetimes of 1 ns or less can be obtained. The cavity parameters are shown to have a 2nd-order effect only.

References

    1. 1)
      • H. Pollmann , B.G. Bosch . Injection priming of pulsed Gunn oscillators. IEEE Trans. , 609 - 610
    2. 2)
      • S. Sagimoto , T. Sugura . Nanosecond pulse generation at 11 GHz with Gunn effect diodes. Proc. Inst. Elec. Electron. Eng. , 1215 - 1217
    3. 3)
      • Myers, F.A.: `A rise time investigation of pulsed Gunn effect oscillation', Proceedings of the MOGA conference, 1970.
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