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Determination of the velocity/field characteristic for n type indium phosphide from dipole-domain measurements

Determination of the velocity/field characteristic for n type indium phosphide from dipole-domain measurements

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Measurements on dipole domains in indium phosphide have shown that the depletion ratio is low and varies with domain voltage for peak fields up to at least 75 kV/cm for material with a 6×1014 cm−3 carrier density. A velocity/field characteristic, determined, using these data, has a much lower valley field than that indicated by previous measurements.

References

    1. 1)
      • E.M. Bastida , G. Fabri , V. Svelto , F. Vaghi . Indirect electron drift velocity versus electric field measurement in GaAs. Appl. Phys. Lett. , 28 - 31
    2. 2)
      • P.M. Boers . Measurements on the velocity/field characteristic of indium phosphide. Electron. Lett. , 625 - 626
    3. 3)
      • J.A. Copeland . Stable space-charge layers in two-valley semiconductors. J. Appl. Phys. , 3602 - 3609
    4. 4)
      • P.N. Butcher , W. Fawcett . Stable domain propagation in the Gunn effect. Br. J. Appl. Phys. , 1425 - 1432
    5. 5)
      • Gunn, J.B.: `Electronic transport properties relevant to instabilities in GaAs', Proceedings of the international conference on the physics of semiconductors, 1966, Kyoto, (J. Phys. Soc. Jap., 1966, 21, pp. 505–508).
    6. 6)
      • J.B. Gunn . On the shape of travelling domains in gallium arsenide. IEEE Trans. , 720 - 721
    7. 7)
      • H.W. Thim , M.R. Barber . Observation of multiple high-field domains in n-GaAs. Proc. Inst. Elec. Electron. Eng. , 110 - 111
    8. 8)
      • M.P. Shaw , P.R. Solomon , H.L. Grubin . The influence of boundary conditions on current instabilities in GaAs. IBM J. Res. & Develop. , 587 - 590
    9. 9)
      • R. Kaul , H.L. Grubin , G.O. Ladd , J.M. Break . Electrical characteristics of bulk n-InP oscillators. IEEE Trans. , 988 - 990
    10. 10)
      • M. 'T Lam , G.A. Acket . Comparison of the microwave velocity/field characteristics of n type InP and n type GaAs. Electron. Lett. , 722 - 723
    11. 11)
      • L.D. Nielson . Measurement of velocity field characteristic for electrons in indium phosphide. Solid-State Commun. , 169 - 171
    12. 12)
      • G.H. Glover . Microwave measurement of the velocity field characteristic of n type InP. Appl. Phys. Lett. , 224 - 225
    13. 13)
      • P.M. Boers . Measurement on dipole domains in indium phosphide. Phys. Lett. , 329 - 330
    14. 14)
      • H.D. Rees , C. Hilsum . Three-level transferred-electron effects in InP. Electron. Lett. , 437 - 438
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