© The Institution of Electrical Engineers
The analysis by Kurokowa of the Rucker multidevice symmetrical oscillator circuit has been applied to the design of a single-tuned high-power IMPATT amplifier. It is shown that the stability of the amplifier régime can be predicted from a simple circuit model. An experimental circuit has successfully demonstrated the different circuit régimes when operating in a single coherent mode.
References
-
-
1)
-
A.M. Cowley ,
R.C. Patterson
.
High-power parallel-array IMPATT diodes.
Electron. Lett.
,
301 -
303
-
2)
-
K. Kurokowa
.
An analysis of Rucker's multidevice symmetrical oscillator.
IEEE Trans.
,
967 -
969
-
3)
-
A.S. Bains
.
High-power microwave amplifier using IMPATT diodes.
Electron. Lett.
,
427 -
428
-
4)
-
Noisten, J.: `Avalanche diode power amplifier for ku-band', IEEE international solid-state circuits conference, 1970, p. 16–17.
-
5)
-
C.T. Rucker
.
A multiple-diode high-average-power avalanche-diode oscillator.
IEEE Trans.
,
1156 -
1158
-
6)
-
W.H. Ku ,
E.F. Scherer
.
Gain-bandwidth optimisation of avalanche diode amplifiers.
IEEE Trans.
,
932 -
942
-
7)
-
S. Mizushina
.
2N oscillators combined with 3 dB directional couplers for output power summing.
Proc. Inst. Elec. Electron. Eng.
-
8)
-
P.W. Braddock
.
Experimental characterisation of avalanche-diode reflection amplifiers and locked oscillators.
Electron. Lett.
,
42 -
44
http://iet.metastore.ingenta.com/content/journals/10.1049/el_19720409
Related content
content/journals/10.1049/el_19720409
pub_keyword,iet_inspecKeyword,pub_concept
6
6