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High-power avalanche IMPATT reflection amplifier using the Rucker combining circuit

High-power avalanche IMPATT reflection amplifier using the Rucker combining circuit

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© The Institution of Electrical Engineers
Published

The analysis by Kurokowa of the Rucker multidevice symmetrical oscillator circuit has been applied to the design of a single-tuned high-power IMPATT amplifier. It is shown that the stability of the amplifier régime can be predicted from a simple circuit model. An experimental circuit has successfully demonstrated the different circuit régimes when operating in a single coherent mode.

Inspec keywords: IMPATT devices; microwave amplifiers; stability

Other keywords: microwave amplifiers; high power avalanche devices; Rucker combining circuit; single coherent mode; stability; IMPATT devices

Subjects: Junction and barrier diodes; Amplifiers; Solid-state microwave circuits and devices

References

    1. 1)
      • A.M. Cowley , R.C. Patterson . High-power parallel-array IMPATT diodes. Electron. Lett. , 301 - 303
    2. 2)
      • K. Kurokowa . An analysis of Rucker's multidevice symmetrical oscillator. IEEE Trans. , 967 - 969
    3. 3)
      • A.S. Bains . High-power microwave amplifier using IMPATT diodes. Electron. Lett. , 427 - 428
    4. 4)
      • Noisten, J.: `Avalanche diode power amplifier for ku-band', IEEE international solid-state circuits conference, 1970, p. 16–17.
    5. 5)
      • C.T. Rucker . A multiple-diode high-average-power avalanche-diode oscillator. IEEE Trans. , 1156 - 1158
    6. 6)
      • W.H. Ku , E.F. Scherer . Gain-bandwidth optimisation of avalanche diode amplifiers. IEEE Trans. , 932 - 942
    7. 7)
      • S. Mizushina . 2N oscillators combined with 3 dB directional couplers for output power summing. Proc. Inst. Elec. Electron. Eng.
    8. 8)
      • P.W. Braddock . Experimental characterisation of avalanche-diode reflection amplifiers and locked oscillators. Electron. Lett. , 42 - 44
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