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Two-dimensional analysis of planar diffusion

Two-dimensional analysis of planar diffusion

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A 2-dimensional numerical analysis of diffusion phenomena in semiconductors is presented. This analysis takes into account nearly all the physical phenomena known for diffusion in semiconductors, and accurate information on lateral diffusion is obtained.

References

    1. 1)
      • J. Monnier , A. Maffei , M. Stern , D. Vandorpe . Numerical analysis of simultaneous diffusion of several impurities in silicon and silicon dioxide. Electron. Lett. , 517 - 518
    2. 2)
      • S.M. Hu , S. Schmidt . Interactions in sequential diffusion processes in semiconductors. J. Appl. Phys. , 4272 - 4283
    3. 3)
      • D.P. Kennedy , P.C. Murley . Calculations of impurity atom diffusion through a narrow diffusion mask opening. IBM J. Res. & Develop. , 6 - 12
    4. 4)
      • R.S. Varga . (1963) , Matrix iterative analysis.
    5. 5)
      • Vandorpe, D.: `Étude mathématique de la fabrication du comportement des dispositifs semiconducteurs', 1971, Thesis, Université de Lyon.
    6. 6)
      • Monnier, J.: `Simulation numérique de la diffusion d'impuretés dans un semiconducter. Application au cas du bore dans le silicium', 1971, Ing-doct. thesis, Université de Grenoble.
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