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Numerical analysis of simultaneous diffusion of several impurities in silicon and silicon dioxide

Numerical analysis of simultaneous diffusion of several impurities in silicon and silicon dioxide

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An iterative method to simulate the diffusion phenomena in semiconductor technology is presented. With the computer programs described here, it is possible to obtain accurate values of the impurity concentrations in semiconductor devices directly from technological parameters, such as diffusion temperatures and various elementary times in the process.

References

    1. 1)
      • S.M. Hu , S. Schmidt . Interactions in sequential diffusion processes in semiconductors. J. Appl. Phys.
    2. 2)
      • Monnier, J.: `Simulation numérique de la diffusion d'impuretés dans un semiconducteur. Application au cas du bore dans le silicium', 1971, Doct. Ing. thesis, , Grenoble.
    3. 3)
      • Bonis, M., Blanchard, B., de Brebisson, M., Hilleret, N., Monnier, J.: `Characterization of diffused profiles obtained from mixed doped oxides', Meeting at Miami, October 1972, Fla..
    4. 4)
      • B. Blanchard , N. Hilleret , J. Monnier . Analyses de couches minces de silice par émission ionique secondaire. Mater. Res. Bull. , 1283 - 1296
    5. 5)
      • Vandorpe, D.: `Étude mathématique de la fabrication et du comportement des dispositifs semiconducteurs', 1971, Thesis, , Lyon.
    6. 6)
      • M.S. Mock . Numerical analysis of a nonlinear diffusion problem. J. Ass. Comput. Mech.
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