http://iet.metastore.ingenta.com
1887

Numerical analysis of simultaneous diffusion of several impurities in silicon and silicon dioxide

Numerical analysis of simultaneous diffusion of several impurities in silicon and silicon dioxide

For access to this article, please select a purchase option:

Buy article PDF
$19.95
(plus tax if applicable)
Buy Knowledge Pack
10 articles for $120.00
(plus taxes if applicable)

IET members benefit from discounts to all IET publications and free access to E&T Magazine. If you are an IET member, log in to your account and the discounts will automatically be applied.

Learn more about IET membership 

Recommend Title Publication to library

You must fill out fields marked with: *

Librarian details
Name:*
Email:*
Your details
Name:*
Email:*
Department:*
Why are you recommending this title?
Select reason:
 
 
 
 
 
Electronics Letters — Recommend this title to your library

Thank you

Your recommendation has been sent to your librarian.

An iterative method to simulate the diffusion phenomena in semiconductor technology is presented. With the computer programs described here, it is possible to obtain accurate values of the impurity concentrations in semiconductor devices directly from technological parameters, such as diffusion temperatures and various elementary times in the process.

References

    1. 1)
      • S.M. Hu , S. Schmidt . Interactions in sequential diffusion processes in semiconductors. J. Appl. Phys.
    2. 2)
      • M.S. Mock . Numerical analysis of a nonlinear diffusion problem. J. Ass. Comput. Mech.
    3. 3)
      • Monnier, J.: `Simulation numérique de la diffusion d'impuretés dans un semiconducteur. Application au cas du bore dans le silicium', 1971, Doct. Ing. thesis, , Grenoble.
    4. 4)
      • Vandorpe, D.: `Étude mathématique de la fabrication et du comportement des dispositifs semiconducteurs', 1971, Thesis, , Lyon.
    5. 5)
      • B. Blanchard , N. Hilleret , J. Monnier . Analyses de couches minces de silice par émission ionique secondaire. Mater. Res. Bull. , 1283 - 1296
    6. 6)
      • Bonis, M., Blanchard, B., de Brebisson, M., Hilleret, N., Monnier, J.: `Characterization of diffused profiles obtained from mixed doped oxides', Meeting at Miami, October 1972, Fla..
http://iet.metastore.ingenta.com/content/journals/10.1049/el_19720377
Loading

Related content

content/journals/10.1049/el_19720377
pub_keyword,iet_inspecKeyword,pub_concept
6
6
Loading
This is a required field
Please enter a valid email address