Simulation of Pt-n-p+ silicon punchthrough device

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Simulation of Pt-n-p+ silicon punchthrough device

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© The Institution of Electrical Engineers
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The small-signal impedance of a Pt-n-p+ device has been computed using a model which describes in detail the physical mechanisms in the depleted n region. The small-signal negative resistance is shown to be both frequency- and temperature-dependent at a given bias-current density.

Inspec keywords: microwave devices; semiconductor device models; simulation; negative resistance effects; electrical impedance

Other keywords: punchthrough injection device; simulation; microwave device; small signal impedance analysis; Pt-n-p silicon structure; negative resistance effects; semiconductor device models

Subjects: Solid-state microwave circuits and devices; Semiconductor device modelling, equivalent circuits, design and testing; Other semiconductor devices

References

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      • K.P. Weller . Small-signal theory of a transit-time negative-resistance device utilising injection from a Schottky barrier. RCA Rev. , 372 - 383
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      • J.A.C. Stewart , D.R. Conn , H.R. Mitchell . Small signal lumped model for IMPATT diodes. Int. J. Electron. , 301 - 313
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      • G.T. Wright . Punch-through transit-time oscillator. Electron. Lett. , 543 - 544
    4. 4)
      • C.A. Lee , G.C. Dalman . Local-oscillator noise in a silicon Pt-n-p+ microwave diode source. Elecrron.Lett. , 565 - 566
    5. 5)
      • C.P. Snapp , P. Weissglas . On the microwave activity of punch-through injection transit time structures. IEEE Trans.
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      • D.J. Coleman , S.M. Sze . A low-noise metal-semiconductor-metal (m.s.m.) microwave oscillator. Bell Syst. Tech. J. , 1695 - 1699
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      • H.A. Haus , H. Statz , R.A. Pucel . Noise measure of metal-semiconductor-metal Schottky-barrier microwave diodes. Elecrron.Lett. , 667 - 669
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