Electron transfer in indium phosphide

Access Full Text

Electron transfer in indium phosphide

For access to this article, please select a purchase option:

Buy article PDF
£12.50
(plus tax if applicable)
Add to cart
Buy Knowledge Pack
10 articles for £75.00
(plus taxes if applicable)
Add to cart

IET members benefit from discounts to all IET publications and free access to E&T Magazine. If you are an IET member, log in to your account and the discounts will automatically be applied.

Learn more about IET membership 

Recommend Title Publication to library

You must fill out fields marked with: *

Librarian details
Name:*
Email:*
Your details
Name:*
Email:*
Department:*
Why are you recommending this title?
Select reason:
 
 
 
 
 
Electronics Letters — Recommend this title to your library

Thank you

Your recommendation has been sent to your librarian.

© The Institution of Electrical Engineers
Published

Evidence for 2-level transfer in indium phosphide based on determinations of threshold field is shown to be inconclusive.

Inspec keywords: band structure; electrical conductivity of solids; semiconductor materials; semiconductor device models; electron mobility; indium compounds

Other keywords: semiconductor measurements; indium phosphide; semiconductor device models; electron transfer; band structure; electron mobilities

Subjects: Semiconductor device modelling, equivalent circuits, design and testing; Semiconductor technology; Carrier scattering by phonons, magnons, and other nonlocalized excitations; Electrical conductivity phenomena in semiconductors and insulators; Electrical conductivity of specific semiconductors and insulators

References

    1. 1)
      • H.D. Rees , C. Hilsum . Three-level transferred-electron effects in InP. Electron. Lett. , 437 - 438
    2. 2)
      • L. Eaves , R.A. Stradling , S. Askenazy , J. Leotin , J.C. Portal , J.P. Ulmet . The magnetophonon effect in epitaxial films of n type InP. J. Phys. C. , 42 - 47
    3. 3)
      • W. Fawcett , C. Hilsum , H.D. Rees . Optimum semiconductor for microwave devices. Electron. Lett. , 313 - 314
    4. 4)
      • R. Kaul , H.C. Grubin , G.O. Ladd , J.M. Barati . Electrical characteristics of bulk InP oscillators. IEEE Trans. , 988 - 990
    5. 5)
      • M. 'T Lam , G.A. Acket . Comparison of the microwave velocity/field characteristics of n type InP and n type GaAs. Electron. Lett. , 722 - 723
    6. 6)
      • G.H. Glover . Microwave measurement of the velocity/field characteristic of n type InP. Appl. Phys. Lett. , 224 - 225
    7. 7)
      • P.M. Boers . Measurements on dipole domains in InP. Phys. Lett. , 329 - 330
    8. 8)
      • L. Drud Nielsen . Microwave measurement of the electron-drift velocity in InP for electric fields up to 50 kV/cm. Phys. Lett. , 221 - 222
    9. 9)
      • P.M. Boers . Measurements on the velocity /field characteristic of InP. Electron. Lett. , 625 - 626
    10. 10)
      • L.W. James , J.P. van Dyke , F. Herman , D.M. Chang . Band structure and high-field transport properties of InP. Phys. Rev. , 3998 - 4004
http://iet.metastore.ingenta.com/content/journals/10.1049/el_19720272
Loading

Related content

content/journals/10.1049/el_19720272
pub_keyword,iet_inspecKeyword,pub_concept
6
6
Loading