Relaxing-avalanche-mode reflection amplifier

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Relaxing-avalanche-mode reflection amplifier

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© The Institution of Electrical Engineers
Published

This letter discusses a single-stage relaxing-avalanche-mode silicon p+-n-n+ reflection amplifier operating at 7.4 GHz with a small-signal gain and half-power bandwidth of 31. 5 dB and 20 MHz, respectively. A description of the amplifier and a discussion of its operation are given.

Inspec keywords: microwave amplifiers; gain measurement; electron avalanches

Other keywords: reflection amplifier; operation; relaxing avalanche mode; silicon; single stage

Subjects: Solid-state microwave circuits and devices; Phase and gain measurement

References

    1. 1)
      • F.G. Zappert , C.A. Lee . Relaxing avalanche mode and its relation to TRAPATT, a.r.p., and IMPATT oscillators. Electron. Lett. , 245 - 246
    2. 2)
      • R.L. Wierich . Accurate calculation of small-sized growth rates in avalanche diodes. Electron. Lett. , 466 - 468
    3. 3)
      • C.P. Snapp , L.A. Stark , B. Hoefflinger . Experimental analysis of high-efficiency avalanche-resonance pumped oscillators. Electron. Lett. , 595 - 596
    4. 4)
      • L.F. Eastman . Multiaxis radial circuit for transferred-electron devices. Electron. Lett. , 149 - 151
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