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Electronic properties of gallium-arsenide field-effect-transistor structure used as detector for acoustic surface waves

Electronic properties of gallium-arsenide field-effect-transistor structure used as detector for acoustic surface waves

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© The Institution of Electrical Engineers
Published

A GaAs field-effect-transistor structure has been used as a detector for acoustic surface waves in the frequency range 65–200 MHz. The conversion loss is shown to be strongly dependent on the source-gate and source-drain voltages. The minimum value obtained is 26 dB for frequencies between 80 and 150 MHz.

Inspec keywords: acoustic microwave devices; field effect transistors; semiconductor materials; microwave detectors

Other keywords: 65-200 MHZ; field effect transistors; GaAs; acoustic microwave devices; acoustic surface waves; microwave detectors

Subjects: Other field effect devices; Microwave circuits and devices; Acoustic wave devices

References

    1. 1)
      • M. Bruun , S. Ludvik , C.F. Quate . Field effect transistors on epitaxial GaAs as transducers for acoustic surface waves. Appl. Phys. Lett. , 118 - 120
    2. 2)
      • L.T. Claiborne , E.J. Staples , J.L. Harris , J.P. Mize . Mosfet ultrasonic surface-wave detectors for programmable matched filters. Appl. Phys. Lett. , 58 - 60
    3. 3)
      • D.P. Kennedy , R.R. O'Brien . Computer aided two-dimensional analysis of the junction field-effect transistor. IBM J. Res. Develop. , 95 - 116
    4. 4)
      • Kim Choong-Ki , E.S. Yang . An analysis of current saturation mechanism of junction field effect transistors. IEEE Trans. , 120 - 127
    5. 5)
      • D.L. White . Amplification of ultrasonic waves in piezoelectric semiconductors. J. Appl. Phys. , 2547 - 2554
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