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Noise and distortion considerations in charge-coupled devices

Noise and distortion considerations in charge-coupled devices

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Noise and distortion considerations for charge-coupled devices used in imaging applications are presented. Distortion occurs because of transfer inefficiency and leakage current. Noise contributions due to thermal noise during the formation of the potential wells, shot noise in the leakage current and interface-state noise are discussed.

References

    1. 1)
      • S. Christensson , I. Lundstrom , C. Svensson . Low frequency noise in MOS transisters I. Solid State Electron. , 797 - 812
    2. 2)
      • S.T. Hsu . Surface state related 1/f noise in MOS transistors. Solid State Electron. , 1451 - 1459
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