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TRAPATT-diode model for circuit design

TRAPATT-diode model for circuit design

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A simple model of a diode operating in the TRAPATT mode is proposed which should be useful in the design of TRAPATT circuits. The model consists of only two elements; a nonlinear capacitance shunted by a voltage- and current-controlled switch. Initial simulations using this model have yielded good results without the use of excessive computer time.

References

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      • W.J. Evans . Circuits for high-efficiency avalanche-diode oscillators. IEEE Trans. , 1060 - 1067
    2. 2)
      • D.L. Scharfetter . Power-frequency characteristics of the TRAPATT diode mode of high-efficiency power generation in germanium and silicon avalanche diodes. Bell Syst. Tech. J. , 799 - 826
    3. 3)
      • A.S. Clorfeine , R.J. Ikola , L.S. Napoli . A theory for the high-efficiency mode of oscillation in avalanche diodes. RCA Rev. , 397 - 421
    4. 4)
      • C.P. Snapp . Subharmonic generation and the trapped-plasma mode in avalanching silicon p+-n-n+ junctions. IEEE Trans. , 294 - 308
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