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Pulse generation in planar Gunn devices with varying nL product

Pulse generation in planar Gunn devices with varying nL product

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Measurements of the current reduction in planar Gunn devices by domain nucleation are reported. The devices were made of epitaxially grown GaAs layers. The measurements showed a decrease of the current reduction, relative to the threshold current Ith, with decreasing nL product, beginning at about nL = 1013 cm−2, where n is the electron concentration and L is the length of active channel.

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