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New time-of-flight technique for measuring drift velocity in semiconductors

New time-of-flight technique for measuring drift velocity in semiconductors

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A microwave time-of-flight method for measuring the v/E characteristic of semiconductors is described. Results taken on a sample of gallium arsenide, using this technique, are shown to be in good agreement with those obtained from the same sample by the more conventional time-of-flight method.

References

    1. 1)
      • C.B. Norris , J.F. Gibbons . Measurement of high-field carrier drift velocities in silicon by a time-of-flight technique. IEEE Trans. , 38 - 43
    2. 2)
      • J.G. Ruch , G.S. Kino . Transport properties of GaAs. Phys. Rev. , 921 - 931
    3. 3)
      • D.M. Chang , J.G. Ruch . Measurement of the velocity field characteristic of electrons in germanium. Appl. Phys. Lett. , 111 - 112
    4. 4)
      • T.W. Sigmon , J.F. Gibbons , C.B. Norris . Observation of localised radiation damage in silicon. Appl. Phys. Lett. , 90 - 92
    5. 5)
      • J.G. Ruch , W. Fawcett . Temperature dependence of the transport properties of gallium arsenide determined by a Monte-Carlo method. J. Appl. Phys. , 3843 - 3850
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