Your browser does not support JavaScript!
http://iet.metastore.ingenta.com
1887

Statistical nature of impurity-atom diffusion and its influence on the characteristics of narrow-base bipolar transistors

Statistical nature of impurity-atom diffusion and its influence on the characteristics of narrow-base bipolar transistors

For access to this article, please select a purchase option:

Buy article PDF
£12.50
(plus tax if applicable)
Add to cart
Buy Knowledge Pack
10 articles for £75.00
(plus taxes if applicable)
Add to cart

IET members benefit from discounts to all IET publications and free access to E&T Magazine. If you are an IET member, log in to your account and the discounts will automatically be applied.

Learn more about IET membership 

Recommend Title Publication to library

You must fill out fields marked with: *

Librarian details
Name:*
Email:*
Your details
Name:*
Email:*
Department:*
Why are you recommending this title?
Select reason:
 
 
 
 
 
Electronics Letters — Recommend this title to your library

Thank you

Your recommendation has been sent to your librarian.

© The Institution of Electrical Engineers
Published

Statistical fluctuations inherent in any diffusion process could place fundamental limitations on the minimum basewidth obtainable in bipolar-transistor fabrication. Calculations are presented to demonstrate the probability of encountering channels of low impurity-atom density (hence reduced punch-through voltage) in a very-narrow-base transistor.

Inspec keywords: diffusion; semiconductor device manufacture; bipolar transistors; semiconductor doping

Other keywords: impurity atom density; narrow base; fabrication; channel encountering; bipolar transistors; diffusion process; probability; basewidth; limitations; statistical fluctuations

Subjects: Semiconductor doping; Bipolar transistors; Semiconductor industry

References

    1. 1)
      • S. Chandrasekhar . Stochastic problems in physics and astronomy. Rev. Mod. Phys.
    2. 2)
      • H.S. Carslaw , J.C. Jaeger . (1959) , Conduction of heat in solids.
    3. 3)
      • W. Jost . (1952) , Diffusion in solids, liquids, and gases.
    4. 4)
      • W. Shockley . Problems related to p-n junctions in silicon. Solid-State Electron. , 35 - 67
http://iet.metastore.ingenta.com/content/journals/10.1049/el_19720127
Loading

Related content

content/journals/10.1049/el_19720127
pub_keyword,iet_inspecKeyword,pub_concept
6
6
Loading
Print this page
This is a required field
Please enter a valid email address