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High-efficiency c.w. operation of ‘anomalous’ indium-phosphide microwave oscillators

High-efficiency c.w. operation of ‘anomalous’ indium-phosphide microwave oscillators

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Improved c.w. performance of InP transferred-electron oscillators is reported over a frequency range of 13–27 GHz, with a best efficiency of 10% at 22 GHz. The current/voltage characteristics of these devices exhibit an anomalous behaviour whose temperature dependence is similar to that produced by an injecting barrier at the cathode contact.

References

    1. 1)
      • G. Gibbons , P.M. White . InP pulsed and c.w. millimetre-wave oscillators. Electron. Lett. , 150 - 151
    2. 2)
      • Gibbons, G., White, P.M.: `C.W. and pulsed indium phosphide transferred electron oscillators', paper A2/4, Proceedings of the 1971 European microwave conference, Stockholm, Sweden.
    3. 3)
      • D.J. Colliver , K.W. Gray , B.D. Joyce . High-efficiency microwave generation in InP. Electron. Lett. , 11 - 12
    4. 4)
      • Hales, M.C., Knight, J.R., Wilkins, C.W.: `Epitaxial InP and InAs', 3rd conference on GaAs and related compounds, 1970, Aachen, Institute of Physics & Physical Society.
    5. 5)
      • S.P. Yu , W. Tantraporn , J.D. Young . Transit-time negative conductance in GaAs bulk-effect diodes. IEEE Trans. , 88 - 93
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