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F.M.-noise and bias-current fluctuations of a silicon Pd-n-p+ microwave oscillator

F.M.-noise and bias-current fluctuations of a silicon Pd-n-p+ microwave oscillator

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Fabrication of silicon Pd-n-p+ X band punchthrough transit-time diodes is described. A power output of 14 mW at 10.6 GHz has been obtained. Measurements of the f.m.-noise spectrum at maximum power output and the short-circuit-current noise are presented. At low modulating frequencies, the f.m. noise consists of unconverted current fluctuations. The f.m. single-sideband noise, 500 kHz off the carrier, is 21.5 dB.

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