F.M.-noise and bias-current fluctuations of a silicon Pd-n-p+ microwave oscillator

F.M.-noise and bias-current fluctuations of a silicon Pd-n-p+ microwave oscillator

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Fabrication of silicon Pd-n-p+ X band punchthrough transit-time diodes is described. A power output of 14 mW at 10.6 GHz has been obtained. Measurements of the f.m.-noise spectrum at maximum power output and the short-circuit-current noise are presented. At low modulating frequencies, the f.m. noise consists of unconverted current fluctuations. The f.m. single-sideband noise, 500 kHz off the carrier, is 21.5 dB.


    1. 1)
      • D.J. Coleman , S.M. Sze . A low-noise metal-semiconductor-metal (MSM) microwave oscillator. Bell Syst. Tech. J. , 1695 - 1699
    2. 2)
      • J. Freyer , M. Claassen , W. Harth . Fabrication of an epitaxial-silicon Pd-n-Pd microwave generator. Arch. Elek. Übertrag.
    3. 3)
      • C.A. Lee , G.C. Dalman . Local-oscillator noise in a silicon Pt-n-p+ microwave diode source. Electron. Lett. , 565 - 566
    4. 4)
      • Chu, J.L., Coleman, D.J., Sze, S.M.: `Microwave oscillations in ', Presented at 1971 international electron device meeting, 11th–13th October 1971, Washington, DC.
    5. 5)
      • C.P. Snapp , P. Weissglas . Experimental comparison of silicon p+-n-p+ and Cr-n-p+ transit-time oscillators. Electron. Lett. , 743 - 744
    6. 6)
      • N.B. Sultan , G.T. Wright . Punchthrough oscillator—new microwave solid-state source. Electron. Lett. , 24 - 26
    7. 7)
      • W. Shockley . Negative resistance arising from transit-time in semiconductor diodes. Bell Syst. Tech. J. , 799 - 826

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