access icon free Erratum: Small-signal equivalent π networks for carrier generation–recombination–trapping at imperfection centres in semiconductors

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Inspec keywords: network synthesis; semiconductor defects; semiconductor device models; equivalent circuits

Other keywords: nonequilibrium DC steady state conditions; imperfection centres in semiconductors; small signal equivalent pi networks; semiconductor device models; carrier generation recombination trapping; computer calculations of an admittance functions

Subjects: Semiconductor devices; General circuit analysis and synthesis methods; Semiconductor device modelling, equivalent circuits, design and testing

http://iet.metastore.ingenta.com/content/journals/10.1049/el_19720101
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This article contains an Erratum to the following content:
Small-signal equivalent π networks for carrier generation–recombination–trapping at imperfection centres in semiconductors