Modification of Gunn instabilities in coplanar diodes by variation of the contact depth
Modification of Gunn instabilities in coplanar diodes by variation of the contact depth
- Author(s): D. Boccon-Gibod ; J.L. Teszner ; M. Mautref
- DOI: 10.1049/el:19720086
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- Author(s): D. Boccon-Gibod 1 ; J.L. Teszner 2 ; M. Mautref 1
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View affiliations
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Affiliations:
1: Laboratoires d'Électronique et de Physique Appliquée, Limeil-Brévannes, France
2: Groupe de Physique des Solides de l'École Normale Supérieure, Paris, France
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Affiliations:
1: Laboratoires d'Électronique et de Physique Appliquée, Limeil-Brévannes, France
- Source:
Volume 8, Issue 5,
9 March 1972,
p.
119 – 120
DOI: 10.1049/el:19720086 , Print ISSN 0013-5194, Online ISSN 1350-911X
© The Institution of Electrical Engineers
Published
The influence of the field singularity of the edge of the cathode of a Gunn diode in a coplanar structure is considered.
Inspec keywords: Gunn diodes; electrical contacts; stability
Other keywords:
Subjects: Semiconductor junctions and interfaces; Bulk effect devices
References
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1)
- Tarui, Y., Komiya, Y., Harada, Y.: `Preferential etching of GaAs and its application to devices', Proceedings of the 2nd conference on solid state devices, 1970, Tokyo, p. 39–45.
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- J.F. Dienst , R. Dean , R. Enstrom , A. Kokkas . Coplanar-contact Gunn effect devices. RCA Rev. , 585 - 594
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- Yanai, H., Suzuki, N., Sugeta, T., Tanimoto, M.: `Effect of electrode structure on dipole domain formation', Symposium on GaAs, 1970, p. 153–162.
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- K. Sekido , M. Takeuchi , Y. Takayama , F. Hajegawa , Y. Hayakawa . Fabrication of planar-type GaAs bulk effect pulse devices. J. Jap. Soc. Appl. Phys. , 19 - 24
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- D. Boccon-Gibod , J.L. Teszner . Experimental evidence of bistable switching in a Gunn epitaxial coplanar diode by anode-surface loading. Electron. Lett. , 468 - 469
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6)
- D. Boccon-Gibod , J.L. Teszner . Lateral capacitive probing of an anode-loaded epitaxial coplanar gallium-arsenide diode. Electron. Lett. , 469 - 472
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