Your browser does not support JavaScript!
http://iet.metastore.ingenta.com
1887

Modification of Gunn instabilities in coplanar diodes by variation of the contact depth

Modification of Gunn instabilities in coplanar diodes by variation of the contact depth

For access to this article, please select a purchase option:

Buy article PDF
£12.50
(plus tax if applicable)
Buy Knowledge Pack
10 articles for £75.00
(plus taxes if applicable)

IET members benefit from discounts to all IET publications and free access to E&T Magazine. If you are an IET member, log in to your account and the discounts will automatically be applied.

Learn more about IET membership 

Recommend Title Publication to library

You must fill out fields marked with: *

Librarian details
Name:*
Email:*
Your details
Name:*
Email:*
Department:*
Why are you recommending this title?
Select reason:
 
 
 
 
 
Electronics Letters — Recommend this title to your library

Thank you

Your recommendation has been sent to your librarian.

The influence of the field singularity of the edge of the cathode of a Gunn diode in a coplanar structure is considered.

References

    1. 1)
      • Tarui, Y., Komiya, Y., Harada, Y.: `Preferential etching of GaAs and its application to devices', Proceedings of the 2nd conference on solid state devices, 1970, Tokyo, p. 39–45.
    2. 2)
      • J.F. Dienst , R. Dean , R. Enstrom , A. Kokkas . Coplanar-contact Gunn effect devices. RCA Rev. , 585 - 594
    3. 3)
      • Yanai, H., Suzuki, N., Sugeta, T., Tanimoto, M.: `Effect of electrode structure on dipole domain formation', Symposium on GaAs, 1970, p. 153–162.
    4. 4)
      • K. Sekido , M. Takeuchi , Y. Takayama , F. Hajegawa , Y. Hayakawa . Fabrication of planar-type GaAs bulk effect pulse devices. J. Jap. Soc. Appl. Phys. , 19 - 24
    5. 5)
      • D. Boccon-Gibod , J.L. Teszner . Experimental evidence of bistable switching in a Gunn epitaxial coplanar diode by anode-surface loading. Electron. Lett. , 468 - 469
    6. 6)
      • D. Boccon-Gibod , J.L. Teszner . Lateral capacitive probing of an anode-loaded epitaxial coplanar gallium-arsenide diode. Electron. Lett. , 469 - 472
http://iet.metastore.ingenta.com/content/journals/10.1049/el_19720086
Loading

Related content

content/journals/10.1049/el_19720086
pub_keyword,iet_inspecKeyword,pub_concept
6
6
Loading
This is a required field
Please enter a valid email address