Gain and noise figure of GaAs transferred-electron amplifiers at 34 GHz

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Gain and noise figure of GaAs transferred-electron amplifiers at 34 GHz

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© The Institution of Electrical Engineers
Published

Experimental results obtained from supercritical c.w. GaAs transferred-electron reflection amplifiers at about 34 GHz are reported. Gains in excess of 20 dB have been observed with typical (gain)½×bandwidth products of 1.0–1.5GHz. The best noise figure is 18 dB, and this parameter is shown to be sensitive to the doping profile. The output power for 1 dB gain compression is typically 2.5–3.0 mW.

Inspec keywords: noise measurement; microwave amplifiers; gain measurement

Other keywords: transferred electron reflection amplifiers; gain bandwidth product; gain compression; noise figure; doping profile

Subjects: Solid-state microwave circuits and devices; Phase and gain measurement

References

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