Electrical behaviour of p Ge-n ZnSe heterojunctions

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Electrical behaviour of p Ge-n ZnSe heterojunctions

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© The Institution of Electrical Engineers
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Three different conduction states, with typical impedances of 1010 Ω, 50 kΩ and 3 kΩ, have been found in hetero-junctions prepared by evaporation of the II-VI compound. A switching phenomena, with memory, is found to occur between two of the conduction states. The switching sequence is rapid (< 30 ns), and is found in junctions prepared from epitaxial and polycrystalline zinc selenide. The effect has also been observed in the p Si-n ZnS heterojunction system.

Inspec keywords: semiconductor devices; switching theory; electrical conductivity; p-n junctions

Other keywords: p-n junctions; conductivity; switching sequence; conduction states; heterojunctions; switching phenomena

Subjects: Junction and barrier diodes; Semiconductor junctions

References

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      • J.T. Calow , D.L. Kirk , S.J.T. Owen . The electric and photo-response characteristics of Ge-ZnSe heterojunctions. Proc. Inst. Elec. Radio Eng. , 243 - 252
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      • M.A. Lampert . Simplified theory of space charge limited currents in an insulator with traps. Phys. Rev. , 1648 - 1656
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      • J.T. Calow , D.L. Kirk , S.J.T. Owen . The growth of epitaxial zinc selenide upon germanium substrates. Thin Solid Films
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      • J.T. Calow , S.J.T. Owen , P.W. Webb . The growth and electrical characteristics of epitaxial layers of zinc selenide on p-type germanium. Phys. Status Solidi , 295 - 303
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      • H.J. Hovell , J.J. Urgell . Switching and memory characteristics of ZnSe-Ge heterojunctions. J. Appl. Phys. , 5076 - 5083
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