Resonant-cap structures for IMPATT diodes

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Resonant-cap structures for IMPATT diodes

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© The Institution of Electrical Engineers
Published

A series of measurements at 10 GHz giving the performance of IMPATT diodes obtained when varying the parameters of a cap circuit are presented. The results indicate that, with correctly chosen parameters, the circuit is suitable for operation over a 40% bandwidth.

Inspec keywords: microwave devices; IMPATT diodes; resonators

Other keywords: waveguide components; 10 GHz; cap circuit; resonators; IMPATT diodes

Subjects: Junction and barrier diodes

References

    1. 1)
      • T.P. Lee , R.D. Standley , T. Misawa . A 50 GHz silicon IMPATT diode oscillator and amplifier. IEEE Trans. , 741 - 747
http://iet.metastore.ingenta.com/content/journals/10.1049/el_19720071
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