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Electric-field profile and current control of a long epitaxial GaAs n layer

Electric-field profile and current control of a long epitaxial GaAs n layer

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© The Institution of Electrical Engineers
Published

Control of the cathode current is used to achieve an electric-field bias above the negative-resistance threshold field on an extended length of GaAs epitaxial layer grown on a semi-insulating substrate. The cathode current is controlled with a Schottky-barrier contact strip parallel to the cathode.

Inspec keywords: semiconductor thin films; electric current control; substrates; epitaxial growth; negative resistance effects

Other keywords: epitaxial growth; current regulation; electric fields; substrate; Schottky barrier diodes; cathode current; semiconductor thin films; negative resistance

Subjects: Semiconductor junctions and interfaces

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