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Metal-nitride-oxide-silicon-capacitor arrays as electrical and optical stores

Metal-nitride-oxide-silicon-capacitor arrays as electrical and optical stores

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Metal-nitride-oxide-silicon capacitor arrays can be used to store information which is presented to the input as an electrical or optical pattern. The stored information can be read sequentially and nondestructively. Such arrays offer the possibility of high-density memories which are simple in structure and mode of operation.

References

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      • W.S. Boyle , G.E. Smith . Charge coupled semiconductor devices. Bell Syst. Tech. J. , 587 - 593
    2. 2)
      • J.T. Wallmark , T.H. Scott . Switching and storage characteristic of MIS memory transistors. RCA Rev. , 335 - 365
    3. 3)
      • F.P. Heiman . On the determination of minority carrier lifetime from the transient response of an MOS capacitor. IEEE Trans. , 781 - 784
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