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Evaluation of an approximated doping profile for diffused junctions from capacitance measurements

Evaluation of an approximated doping profile for diffused junctions from capacitance measurements

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© The Institution of Electrical Engineers
Published

The differential-capacitance technique for the evaluation of doping profiles of the low-doped side of strongly asymmetrical p-n junctions may be extended to diffused junctions, provided that the actual profile is approximated by an exponential function. An easy fit between experimental and theoretical curves allows evaluation of the two parameters of the exponential approximation.

Inspec keywords: p-n junctions; diffusion; capacitance measurement; semiconductor doping

Other keywords: diffused junctions; doping profiles; exponential functions; differential capacitance technique; asymmetrical p-n junctions

Subjects: Impedance and admittance measurement; Junction and barrier diodes; Semiconductor doping; Semiconductor technology; Semiconductor junctions

References

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      • C.O. Thomas , D. Kahng , R.C. Manz . Impurity distributions in epitaxial silicon films. J. Electrochem. Soc.
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      • R.M. Warner , J.N. Fordemwalt . (1965) , Integrated circuits.
    3. 3)
      • D.P. Kennedy , R.R. O'brien . On the measurements of impurity atom distributions by the differential capacitance technique. IBM J. Res. & Decelop.
    4. 4)
      • C. Van Opdorp . Evaluation of doping profiles from capacitance measurements. Solid-State Electron.
    5. 5)
      • N.I. Meyer , T. Guldbransen . Method for measuring impurity distributions in semiconductor crystals. Proc. Inst. Elec. Electron. Eng.
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