Evaluation of an approximated doping profile for diffused junctions from capacitance measurements

Evaluation of an approximated doping profile for diffused junctions from capacitance measurements

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The differential-capacitance technique for the evaluation of doping profiles of the low-doped side of strongly asymmetrical p-n junctions may be extended to diffused junctions, provided that the actual profile is approximated by an exponential function. An easy fit between experimental and theoretical curves allows evaluation of the two parameters of the exponential approximation.


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