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Screened impurity scattering in heavily doped covalent semiconductors

Screened impurity scattering in heavily doped covalent semiconductors

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© The Institution of Electrical Engineers
Published

A method is presented for determining the relative strengths of acoustic lattice scattering and screened impurity scattering in heavily doped semiconductors from measurements of their Hall mobility and thermoelectric power. Screening of the impurity centres by the free carriers results in an appreciable reduction in the impurity-scattering contribution, and this effect is estimated for heavily doped n type germanium.

Inspec keywords: semiconductors; semiconductor doping; thermoelectricity; Hall effect

Other keywords: acoustic lattice scattering; heavily doped semiconductors; n-Ge; covalent semiconductors; thermoelectric power; screened impurity scattering; Hall mobility

Subjects: Semiconductor doping; Semiconductor technology

References

    1. 1)
      • D.M. Rowe . Graphical method for estimating phonon-and impurity-scattering contributions in heavily doped semiconductors. Electron. Lett. , 315 - 317
    2. 2)
      • F.J. Blatt , F. Seitz , D. Turnbull . (1957) , Solid state physics-Vol.4.
    3. 3)
      • V.I. Fistul , E.M. Omelyasnovskii , Z.I. Tatarov . Relationship between phonon and impurity scattering in doped germanium and silicon. Fiz. Tver. Tela. , 974 - 980
    4. 4)
      • V.I. Fistul . (1969) , Heavily doped semiconductors.
    5. 5)
      • V.I. Fistul , K.V. Cherkas . The thermo-emf of heavily alloyed n-type germanium. Fiz. Tver. Tela. , 3288 - 3292
    6. 6)
      • O. Madelung , M. Schulz , H. Weiss . (1982) , Semiconductors.
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