© The Institution of Electrical Engineers
A method is presented for determining the relative strengths of acoustic lattice scattering and screened impurity scattering in heavily doped semiconductors from measurements of their Hall mobility and thermoelectric power. Screening of the impurity centres by the free carriers results in an appreciable reduction in the impurity-scattering contribution, and this effect is estimated for heavily doped n type germanium.
References
-
-
1)
-
D.M. Rowe
.
Graphical method for estimating phonon-and impurity-scattering contributions in heavily doped semiconductors.
Electron. Lett.
,
315 -
317
-
2)
-
F.J. Blatt ,
F. Seitz ,
D. Turnbull
.
(1957)
, Solid state physics-Vol.4.
-
3)
-
V.I. Fistul ,
E.M. Omelyasnovskii ,
Z.I. Tatarov
.
Relationship between phonon and impurity scattering in doped germanium and silicon.
Fiz. Tver. Tela.
,
974 -
980
-
4)
-
V.I. Fistul
.
(1969)
, Heavily doped semiconductors.
-
5)
-
V.I. Fistul ,
K.V. Cherkas
.
The thermo-emf of heavily alloyed n-type germanium.
Fiz. Tver. Tela.
,
3288 -
3292
-
6)
-
O. Madelung ,
M. Schulz ,
H. Weiss
.
(1982)
, Semiconductors.
http://iet.metastore.ingenta.com/content/journals/10.1049/el_19710521
Related content
content/journals/10.1049/el_19710521
pub_keyword,iet_inspecKeyword,pub_concept
6
6