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Screened impurity scattering in heavily doped covalent semiconductors

Screened impurity scattering in heavily doped covalent semiconductors

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A method is presented for determining the relative strengths of acoustic lattice scattering and screened impurity scattering in heavily doped semiconductors from measurements of their Hall mobility and thermoelectric power. Screening of the impurity centres by the free carriers results in an appreciable reduction in the impurity-scattering contribution, and this effect is estimated for heavily doped n type germanium.

References

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      • F.J. Blatt , F. Seitz , D. Turnbull . (1957) , Solid state physics-Vol.4.
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      • V.I. Fistul . (1969) , Heavily doped semiconductors.
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      • V.I. Fistul , K.V. Cherkas . The thermo-emf of heavily alloyed n-type germanium. Fiz. Tver. Tela. , 3288 - 3292
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      • V.I. Fistul , E.M. Omelyasnovskii , Z.I. Tatarov . Relationship between phonon and impurity scattering in doped germanium and silicon. Fiz. Tver. Tela. , 974 - 980
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      • O. Madelung , M. Schulz , H. Weiss . (1982) , Semiconductors.
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