Stabilising influence of boron in silicon-gate technology

Stabilising influence of boron in silicon-gate technology

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By performing a series of experiments on polysilicon-oxide-silicon (S.O.S.) capacitors, it is shown that, in p channel silicon-gate technology, a gettering action occurs during the drive-in cycle. Although the exact mechanism of this action is not known, it is tentatively suggested that, during the drive-in cycle, boron enters the gate oxide and renders the mobile ions inactive.


    1. 1)
      • F. Faggin , T. Klein . Silicon gate technology. Solid-State Electron. , 1125 - 1144
    2. 2)
      • M. Kuhn , D.J. Silversmith . Ionic contamination and transport of mobile ions in m.o.s. structures. J. Electrochem. Soc. , 966 - 970
    3. 3)
      • D.P. Seraphim . Electrochemical phenomena in thin films of silicon dioxide on Silicon. IBM J. Res. & Develop. , 400 - 409
    4. 4)
      • Fujimoto, S.: `Effects of diffusion on instabilities of polysilicon-silicon nitride-silicon dioxide-silicon structure', Presented to the 139th meeting of ECS, 1971.

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