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Computer comparison of n+pp+ and p+nn+ junction silicon diodes for IMPATT oscillators

Computer comparison of n+pp+ and p+nn+ junction silicon diodes for IMPATT oscillators

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A digital-computer program has been used to compare the performance of an n+pp+ silicon avalanche diode with its more conventional p+nn+ complementary junction in IMPATT-oscillator operation. The computer simulation of the former junction predicts a significant improvement of oscillator efficiency (20.1 against 13.9%).

References

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      • W.E. Schroeder , G.I. Haddad . Avalanche region width in various structures of IMPATT diodes. Proc. Inst. Elec. Electron. Eng. , 1245 - 1248
    3. 3)
      • Schroeder, W.E., Lee, C.M., Lomax, R.J., Haddad, G.I.: `Avalanche region width in various structures of IMPATT diodes', Presented at the 1971 device research conference, 1971, University of Michigan.
    4. 4)
      • A.L. Ward , B.J. Udelson . Computer calculations of avalanche-induced relaxation oscillations in silicon diodes. IEEE Trans. , 847 - 851
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      • H.M. Bloom . (1969) , Computation of avalanche and space-charge effects in semiconductors and gases.
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      • A.M. Cowley . The singly tuned oscillator. IEEE Trans. , 338 - 345
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