© The Institution of Electrical Engineers
The velocity/field characteristic of n InP has been determined up to 24 kV/cm using a microwave-heating technique. For comparison, the velocity/field characteristic of n GaAs, measured in the same equipment, is also presented. For both InP and GaAs, the characteristic is compared with an experimental curve, determined from space-charge wave measurements, and with a theoretical curve. Information concerning relaxation effects of InP is obtained.
References
-
-
1)
-
B. Fay ,
G.S. Kino
.
A new measurement of the velocity-field characteristic of GaAs.
Appl. Phys. Lett.
,
337 -
339
-
2)
-
P.M. Boers
.
Measurements on the velocity-field characteristic of InP.
Electron. Lett.
,
625 -
626
-
3)
-
P.M. Boers
.
Measurements on dipole domains in indium phosphide.
Phys. Lett. A
,
329 -
330
-
4)
-
W. Fawcett ,
A.D. Boardman ,
S. Swain
.
Monte Carlo determination of electron transport properties in GaAs.
J. Phys. & Chem. Solids
,
1963 -
1990
-
5)
-
P.M. Boers ,
G.A. Acket ,
D.H. Paxman ,
R.J. Tree
.
Observation of high-field domains in n type InP.
Electron. Lett.
,
1 -
2
-
6)
-
C. Hilsum ,
H.D. Rees
.
Three-level oscillator: a new form of transferred-electron device.
Electron. Lett.
,
277 -
278
-
7)
-
W. Heinle
.
Displaced-Maxwellian transport calculation of InP and InAs0.2P0.8.
Phys. Lett. A
,
365 -
366
-
8)
-
H.D. Rees ,
C. Hilsum
.
Three-level transferred-electron effects in InP.
Electron. Lett.
,
437 -
438
-
9)
-
G.H. Glover
.
Error in microwave measurements of the velocity-field characteristic of n-type GaAs due to energy relaxation effects.
Appl. Phys. Lett.
,
290 -
291
-
10)
-
M.T. Vlaardingerbroek ,
P.M. Boers ,
G.A. Acket
.
High-frequency conductivity and energy relaxation of hot electrons in GaAs.
Philips Res. Rep.
,
379 -
391
-
11)
-
G.O. Acket ,
H. T Lam
.
Behaviour of n-type gallium arsenide in strong microwave fields.
Electron. Lett.
,
258 -
259
-
12)
-
L.W. James ,
J.P. van Dyke ,
F. Herman ,
D.M. Chang
.
Band structure and high-field transport properties of InP.
Phys. Rev. B
,
3998 -
4004
-
13)
-
N. Braslau ,
P.S. Hauge
.
Microwave measurements of the velocity-field characteristic of GaAs.
IEEE Trans.
,
616 -
622
-
14)
-
G.A. Acket ,
J. de Groot
.
Measurements of the current-fieldstrength characteristic of n-GaAs using various high-power microwave techniques.
IEEE Trans.
,
505 -
511
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