http://iet.metastore.ingenta.com
1887

Comparison of the microwave velocity/field characteristics of n type InP and n type GaAs

Comparison of the microwave velocity/field characteristics of n type InP and n type GaAs

For access to this article, please select a purchase option:

Buy article PDF
$19.95
(plus tax if applicable)
Buy Knowledge Pack
10 articles for $120.00
(plus taxes if applicable)

IET members benefit from discounts to all IET publications and free access to E&T Magazine. If you are an IET member, log in to your account and the discounts will automatically be applied.

Learn more about IET membership 

Recommend Title Publication to library

You must fill out fields marked with: *

Librarian details
Name:*
Email:*
Your details
Name:*
Email:*
Department:*
Why are you recommending this title?
Select reason:
 
 
 
 
 
Electronics Letters — Recommend this title to your library

Thank you

Your recommendation has been sent to your librarian.

The velocity/field characteristic of n InP has been determined up to 24 kV/cm using a microwave-heating technique. For comparison, the velocity/field characteristic of n GaAs, measured in the same equipment, is also presented. For both InP and GaAs, the characteristic is compared with an experimental curve, determined from space-charge wave measurements, and with a theoretical curve. Information concerning relaxation effects of InP is obtained.

References

    1. 1)
      • C. Hilsum , H.D. Rees . Three-level oscillator: a new form of transferred-electron device. Electron. Lett. , 277 - 278
    2. 2)
      • L.W. James , J.P. van Dyke , F. Herman , D.M. Chang . Band structure and high-field transport properties of InP. Phys. Rev. B , 3998 - 4004
    3. 3)
      • W. Heinle . Displaced-Maxwellian transport calculation of InP and InAs0.2P0.8. Phys. Lett. A , 365 - 366
    4. 4)
      • H.D. Rees , C. Hilsum . Three-level transferred-electron effects in InP. Electron. Lett. , 437 - 438
    5. 5)
      • P.M. Boers . Measurements on the velocity-field characteristic of InP. Electron. Lett. , 625 - 626
    6. 6)
      • G.A. Acket , J. de Groot . Measurements of the current-fieldstrength characteristic of n-GaAs using various high-power microwave techniques. IEEE Trans. , 505 - 511
    7. 7)
      • G.O. Acket , H. T Lam . Behaviour of n-type gallium arsenide in strong microwave fields. Electron. Lett. , 258 - 259
    8. 8)
      • N. Braslau , P.S. Hauge . Microwave measurements of the velocity-field characteristic of GaAs. IEEE Trans. , 616 - 622
    9. 9)
      • M.T. Vlaardingerbroek , P.M. Boers , G.A. Acket . High-frequency conductivity and energy relaxation of hot electrons in GaAs. Philips Res. Rep. , 379 - 391
    10. 10)
      • G.H. Glover . Error in microwave measurements of the velocity-field characteristic of n-type GaAs due to energy relaxation effects. Appl. Phys. Lett. , 290 - 291
    11. 11)
      • B. Fay , G.S. Kino . A new measurement of the velocity-field characteristic of GaAs. Appl. Phys. Lett. , 337 - 339
    12. 12)
      • W. Fawcett , A.D. Boardman , S. Swain . Monte Carlo determination of electron transport properties in GaAs. J. Phys. & Chem. Solids , 1963 - 1990
    13. 13)
      • P.M. Boers , G.A. Acket , D.H. Paxman , R.J. Tree . Observation of high-field domains in n type InP. Electron. Lett. , 1 - 2
    14. 14)
      • P.M. Boers . Measurements on dipole domains in indium phosphide. Phys. Lett. A , 329 - 330
http://iet.metastore.ingenta.com/content/journals/10.1049/el_19710495
Loading

Related content

content/journals/10.1049/el_19710495
pub_keyword,iet_inspecKeyword,pub_concept
6
6
Loading
This is a required field
Please enter a valid email address