Two-dimensional analysis of j.f.e.t. structures containing a low-conductivity substrate

Two-dimensional analysis of j.f.e.t. structures containing a low-conductivity substrate

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It is shown that j.f.e.t. structures containing a semiconductor substrate can sometimes exhibit a substantially lower saturation resistance than structures containing an ideally insulating substrate. This characteristic is attributed to velocity-limited carrier transport, in conjunction with the spreading of majority carriers into the semiconductor-substrate material.


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