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Small-signal equivalent π networks for carrier generation–recombination–trapping at imperfection centres in semiconductors

Small-signal equivalent π networks for carrier generation–recombination–trapping at imperfection centres in semiconductors

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A π network for carrier generation–recombination–trapping processes under arbitrary steady-state conditions is obtained, which has the following features which are useful for computer calculations of the admittance functions of semiconductor devices: the admittances are positive real, the voltage-controlled current sources are connected between the hole and electron quasi-Fermi potential nodes, and the current sources vanish at zero external excitation.

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      • C.T. Sah . The equivalent circuit model in solid-state electronics—Pt. III, conduction and displacement currents. Solid-State Electron. , 1547 - 1575
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      • C.T. Sah . Equivalent circuit models in semiconductor transport for thermal, optical, Auger-impact and tunneling recombination–generation–trapping processes. Phys. Status Solidi a
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      • L. Forbes , C.T. Sah . Application of the distributed equilibrium equivalent circuit model to semiconductor junctions. IEEE Trans. , 1036 - 1041
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