Contact effects in Gunn diodes

Contact effects in Gunn diodes

For access to this article, please select a purchase option:

Buy article PDF
(plus tax if applicable)
Buy Knowledge Pack
10 articles for $120.00
(plus taxes if applicable)

IET members benefit from discounts to all IET publications and free access to E&T Magazine. If you are an IET member, log in to your account and the discounts will automatically be applied.

Learn more about IET membership 

Recommend Title Publication to library

You must fill out fields marked with: *

Librarian details
Your details
Why are you recommending this title?
Select reason:
Electronics Letters — Recommend this title to your library

Thank you

Your recommendation has been sent to your librarian.

This letter shows how the splitting of the forward and reverse current/voltage curves of a Gunn diode may be interpreted in terms of different models of contact damage, and proposes a simple test technique to obtain a quantitative measure of contact quality. Experimental verification of this technique is presented, showing a correlation between device efficiency and a contact parameter β.


    1. 1)
      • T.E. Hasty , R. Stratton , E.L. Jones . The effect of nonuniform conductivity on the behaviour of Gunn-effect samples. J. Appl. Phys. , 4623 - 4632
    2. 2)
      • J.G. Ruch , W. Fawcett . Temperature dependence of the transport properties of gallium arsenide determined by a Monte Carlo method. J. Appl. Phys. , 3843 - 3849
    3. 3)
      • H.W. Thim . Computer study of bulk GaAs devices with random one-dimensional doping fluctuations. J. Appl. Phys. , 3897 - 3904

Related content

This is a required field
Please enter a valid email address