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Contact effects in Gunn diodes

Contact effects in Gunn diodes

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This letter shows how the splitting of the forward and reverse current/voltage curves of a Gunn diode may be interpreted in terms of different models of contact damage, and proposes a simple test technique to obtain a quantitative measure of contact quality. Experimental verification of this technique is presented, showing a correlation between device efficiency and a contact parameter β.

References

    1. 1)
      • T.E. Hasty , R. Stratton , E.L. Jones . The effect of nonuniform conductivity on the behaviour of Gunn-effect samples. J. Appl. Phys. , 4623 - 4632
    2. 2)
      • J.G. Ruch , W. Fawcett . Temperature dependence of the transport properties of gallium arsenide determined by a Monte Carlo method. J. Appl. Phys. , 3843 - 3849
    3. 3)
      • H.W. Thim . Computer study of bulk GaAs devices with random one-dimensional doping fluctuations. J. Appl. Phys. , 3897 - 3904
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