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Stabilisation mechanism for ‘supercritical’ transferred-electron amplifiers

Stabilisation mechanism for ‘supercritical’ transferred-electron amplifiers

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It is shown that a supercritical GaAs c.w. Gunn diode with a cathode doping notch and doping profile sloping upwards from the cathode to anode may act as a stabilised amplifier at high bias voltage. This profile is similar to that in many present-day devices, and may provide a more practical way of increasing the field uniformity so that the noise figure may be reduced, as described by Thim. It is suggested that this mode of operation may be more relevant to the operation of supercritical amplifiers than other stabilisation mechanisms involving large anode fields.

References

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      • H.W. Thim . Noise reduction in bulk negative-resistance amplifiers. Electron. Lett. , 106 - 108
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      • S.M. Mahrous , P.N. Robson . Small-signal impedance of stable transferred-electron diodes. Electron. Lett. , 107 - 108
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      • D.E. McCumber , A.G. Chynoweth . Theory of negative conductance amplification and of Gunn instabilities in “two valley” semiconductors. IEEE Trans. , 4 - 21
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      • J.G. Ruch , W. Fawcett . Temperature dependence of the transport properties of gallium arsenide determined by a Monte Carlo method. J. Appl. Phys. , 3843 - 3850
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      • B.S. Perlman , C.L. Upadhyayula , R.E. Marx . Wideband reflection-type transferred electron amplifiers. IEEE Trans. , 911 - 922
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      • J.S. Harris , Y. Nannichi , G.L. Pearson , G.F. Day . Ohmic contacts to solution grown gallium arsenide. J. Appl. Phys. , 4575 - 4581
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      • Magarshak, J., Mircea, A.: `Stabilization and wide band amplification using over-critically doped transferred electron diodes', Proceedings of the MOGA conference, 1970, Amsterdam, Kluwer-Deventer, p. 27, 1970.
    9. 9)
      • Pollmann, H., Engelmann, R.W.H.: `On supercritical reflection-type amplification and the stability criterion in bulk GaAs devices', Proceedings of the MOGA conference, 1970, Amsterdam, Kluwer-Deventer, p. 1624–1628, 1970.
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