Your browser does not support JavaScript!
http://iet.metastore.ingenta.com
1887

Stabilisation mechanism for ‘supercritical’ transferred-electron amplifiers

Stabilisation mechanism for ‘supercritical’ transferred-electron amplifiers

For access to this article, please select a purchase option:

Buy article PDF
$19.95
(plus tax if applicable)
Buy Knowledge Pack
10 articles for $120.00
(plus taxes if applicable)

IET members benefit from discounts to all IET publications and free access to E&T Magazine. If you are an IET member, log in to your account and the discounts will automatically be applied.

Learn more about IET membership 

Recommend Title Publication to library

You must fill out fields marked with: *

Librarian details
Name:*
Email:*
Your details
Name:*
Email:*
Department:*
Why are you recommending this title?
Select reason:
 
 
 
 
 
Electronics Letters — Recommend this title to your library

Thank you

Your recommendation has been sent to your librarian.

It is shown that a supercritical GaAs c.w. Gunn diode with a cathode doping notch and doping profile sloping upwards from the cathode to anode may act as a stabilised amplifier at high bias voltage. This profile is similar to that in many present-day devices, and may provide a more practical way of increasing the field uniformity so that the noise figure may be reduced, as described by Thim. It is suggested that this mode of operation may be more relevant to the operation of supercritical amplifiers than other stabilisation mechanisms involving large anode fields.

References

    1. 1)
      • D.E. McCumber , A.G. Chynoweth . Theory of negative conductance amplification and of Gunn instabilities in “two valley” semiconductors. IEEE Trans. , 4 - 21
    2. 2)
      • Magarshak, J., Mircea, A.: `Stabilization and wide band amplification using over-critically doped transferred electron diodes', Proceedings of the MOGA conference, 1970, Amsterdam, Kluwer-Deventer, p. 27, 1970.
    3. 3)
      • S.M. Mahrous , P.N. Robson . Small-signal impedance of stable transferred-electron diodes. Electron. Lett. , 107 - 108
    4. 4)
      • J.S. Harris , Y. Nannichi , G.L. Pearson , G.F. Day . Ohmic contacts to solution grown gallium arsenide. J. Appl. Phys. , 4575 - 4581
    5. 5)
      • B.S. Perlman , C.L. Upadhyayula , R.E. Marx . Wideband reflection-type transferred electron amplifiers. IEEE Trans. , 911 - 922
    6. 6)
      • K.R. Freeman , G.S. Hobson . The V–fT relation of c.w. Gunn effect devices. IEEE Trans.
    7. 7)
      • Pollmann, H., Engelmann, R.W.H.: `On supercritical reflection-type amplification and the stability criterion in bulk GaAs devices', Proceedings of the MOGA conference, 1970, Amsterdam, Kluwer-Deventer, p. 1624–1628, 1970.
    8. 8)
      • J.G. Ruch , W. Fawcett . Temperature dependence of the transport properties of gallium arsenide determined by a Monte Carlo method. J. Appl. Phys. , 3843 - 3850
    9. 9)
      • H.W. Thim . Noise reduction in bulk negative-resistance amplifiers. Electron. Lett. , 106 - 108
http://iet.metastore.ingenta.com/content/journals/10.1049/el_19710389
Loading

Related content

content/journals/10.1049/el_19710389
pub_keyword,iet_inspecKeyword,pub_concept
6
6
Loading
This is a required field
Please enter a valid email address