High-level asymptotic variation of transistor base resistance and current gain

High-level asymptotic variation of transistor base resistance and current gain

For access to this article, please select a purchase option:

Buy article PDF
(plus tax if applicable)
Buy Knowledge Pack
10 articles for $120.00
(plus taxes if applicable)

IET members benefit from discounts to all IET publications and free access to E&T Magazine. If you are an IET member, log in to your account and the discounts will automatically be applied.

Learn more about IET membership 

Recommend Title Publication to library

You must fill out fields marked with: *

Librarian details
Your details
Why are you recommending this title?
Select reason:
Electronics Letters — Recommend this title to your library

Thank you

Your recommendation has been sent to your librarian.

Using a finite-section model for bipolar transistors with current-dependent base resistance and gain, high-current asymptotic variations of base resistance, gain and effective emitter width are studied, and useful analytic formulas are presented.


    1. 1)
      • J.R. Hauser . The effects of distributed base potential on emittercurrent injection density and effective base resistance for stripe transistor geometries. IEEE Trans. , 238 - 242
    2. 2)
      • G. Rey . Effets de la défocalisation (cc. et c.a.) sur le comportement destransistors à junctions. Solid-State Electron. , 645 - 659
    3. 3)
      • P.U. Calzolari , S. Graffi . On the beta falloff in junction transistors. Proc. Inst. Elect. Electron. Engrs. , 1293 - 1294
    4. 4)
      • Seghal, J.: `Two dimensional analysis of transistors operating under high level pulsed conditions', 1969, Thesis, University of Waterloo, Canada.

Related content

This is a required field
Please enter a valid email address