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High-level asymptotic variation of transistor base resistance and current gain

High-level asymptotic variation of transistor base resistance and current gain

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Using a finite-section model for bipolar transistors with current-dependent base resistance and gain, high-current asymptotic variations of base resistance, gain and effective emitter width are studied, and useful analytic formulas are presented.

References

    1. 1)
      • J.R. Hauser . The effects of distributed base potential on emittercurrent injection density and effective base resistance for stripe transistor geometries. IEEE Trans. , 238 - 242
    2. 2)
      • G. Rey . Effets de la défocalisation (cc. et c.a.) sur le comportement destransistors à junctions. Solid-State Electron. , 645 - 659
    3. 3)
      • P.U. Calzolari , S. Graffi . On the beta falloff in junction transistors. Proc. Inst. Elect. Electron. Engrs. , 1293 - 1294
    4. 4)
      • Seghal, J.: `Two dimensional analysis of transistors operating under high level pulsed conditions', 1969, Thesis, University of Waterloo, Canada.
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