© The Institution of Electrical Engineers
A computational technique is described, the purpose of which is to obtain an effective doping profile for double-diffused transistors, using current manufacturers data as starting parameters. The guiding principle in this method is to obtain a doping profile with a calculated base region in full agreement with junction-depth measurements.
References
-
-
1)
-
B. Gradshteyn ,
I. Riszhik
.
, Mathematical tables.
-
2)
-
D.P. Kennedy ,
P.C. Murley
.
Impurity atom distribution from a two-step diffusion process.
Proc. Inst. Elect. Electron. Engrs.
,
620 -
621
-
3)
-
B.I. Boltaks
.
(1966)
, Diffusion in semiconductors.
-
4)
-
J.C. Irvin
.
Resistivity of bulk silicon and of diffused layers in silicon.
Bell Syst. Tech. J.
,
387 -
410
-
5)
-
H.F. Wolf
.
(1969)
, Silicon semiconductor data.
-
6)
-
J. Gajda
.
Evaluation of semiconductors through angle section and junction delineation.
Semiconductor Prod. Solid State Technol.
http://iet.metastore.ingenta.com/content/journals/10.1049/el_19710165
Related content
content/journals/10.1049/el_19710165
pub_keyword,iet_inspecKeyword,pub_concept
6
6