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Improved method for calculation of net impurity-doping profile of double-diffused transistors

Improved method for calculation of net impurity-doping profile of double-diffused transistors

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A computational technique is described, the purpose of which is to obtain an effective doping profile for double-diffused transistors, using current manufacturers data as starting parameters. The guiding principle in this method is to obtain a doping profile with a calculated base region in full agreement with junction-depth measurements.

References

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      • B. Gradshteyn , I. Riszhik . , Mathematical tables.
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      • D.P. Kennedy , P.C. Murley . Impurity atom distribution from a two-step diffusion process. Proc. Inst. Elect. Electron. Engrs. , 620 - 621
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      • J. Gajda . Evaluation of semiconductors through angle section and junction delineation. Semiconductor Prod. Solid State Technol.
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      • J.C. Irvin . Resistivity of bulk silicon and of diffused layers in silicon. Bell Syst. Tech. J. , 387 - 410
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      • H.F. Wolf . (1969) , Silicon semiconductor data.
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